GT30F126 데이터 시트보기 (PDF) - Toshiba
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GT30F126 Datasheet PDF : 73 Pages
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Part Number
Applications
Features
Absolute Maximum Ratings (Ta = 25°C)
Ic
Pc
VCES
(V) DC Pulse Ta = 25°C Tc = 25°C
(A) (A)
(W)
(W)
Package
Type
Circuit
Configuration
(Note)
VCE(sat) Typ.
@Ta = 25°C
@IC @VGE
(V) (A) (V)
tf Typ.
@Ta = 25°C
Test
(µs) Conditions
Remarks
GT45F128 *
GT45F131
330 ⎯ 200
⎯
300 ⎯ 200
⎯
Isolation,
26 TO-220SIS
(1) 1.45 120 15 0.27
Through-hole
160 TO-220SM SMD
(1)
1.7 120 15 0.22
6th generation
5th generation
GT30G122
400 ⎯ 120
⎯
Isolation,
25 TO-220SIS
(1)
Through-hole
2.6 120 15 0.25
5th generation
GT30G123
⎯ 200
⎯
Isolation,
25 TO-220SIS
(1)
Through-hole
2.2 120 15 0.20
6th generation
GT30G124 *
430 ⎯ 200
⎯
Isolation,
25 TO-220SIS
(1)
Through-hole
2.5 120 15 0.23
6th generation
GT30G125 *
GT45G122
GT45G123
GT45G124
PDP-TV
⎯ 200
⎯
PDP sustain,
energy
⎯ 200
⎯
recovery and
separation
⎯ 200
⎯
circuits 400
⎯ 200
⎯
Isolation,
25 TO-220SIS
(1)
Through-hole
Isolation,
25 TO-220SIS
(1)
Through-hole
Isolation,
26 TO-220SIS
(1)
Through-hole
Isolation,
29 TO-220SIS
(1)
Through-hole
2.1 120 15 0.16
6th generation
2.4 120
2.1 120
15 0.28
5th generation
Resistive
load
15 0.23
5th generation
1.9 120 15 0.27
5th generation
GT45G125
⎯ 200
⎯
Isolation,
29 TO-220SIS
(1)
Through-hole
1.6 120 15 0.5
5th generation
GT45G127
GT45G128 *
GT45G131
⎯ 200
⎯
430
⎯ 200
⎯
400 ⎯ 200
⎯
Isolation,
26 TO-220SIS
(1)
Through-hole
1.7 120 15 0.37
Isolation,
26 TO-220SIS
(1) 1.55 120 15 0.41
Through-hole
160 TO-220SM SMD
(1)
1.9 120 15 0.27
6th generation
6th generation
5th generation
GT30J124
600 ⎯ 200
⎯
Isolation,
26 TO-220SIS
(1)
Through-hole
2.4 120 15 0.25
5th generation
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
*: New product
Note)
(1)
Typical
Collector
(2) Built-in FRD
Collector
(3) Built-in Zener diode
Collector
Gate
Gate
Gate
Emitter
Emitter
Emitter
71
2010/9 SCE0004K
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