2SK2699(F,T)(2006) 데이터 시트보기 (PDF) - Toshiba

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2SK2699(F,T)
(Rev.:2006)

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)

Toshiba 

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Gate leakage current

Gate−source breakdown voltage

Drain cut−off current

Drain−source breakdown voltage

Gate threshold voltage

Drain−source ON resistance

Forward transfer admittance

Input capacitance

Reverse transfer capacitance

Output capacitance

IGSS

V (BR) GSS

IDSS

V (BR) DSS

Vth

RDS (ON)

|Yfs|

Ciss

Crss

Coss

VGS = ±25 V, VDS = 0 V

IG = ±10 μA, VDS = 0 V

VDS = 600 V, VGS = 0 V

ID = 10 mA, VGS = 0 V

VDS = 10 V, ID = 1 mA

VGS = 10 V, ID = 6 A

VDS = 10 V, ID = 6 A

VDS = 10 V, VGS = 0 V, f = 1 MHz

Rise time

tr

Turn−on time

ton

Switching time

Fall time

tf

Turn−off time

Total gate charge (gate−source

plus gate−drain)

Gate−source charge

Gate−drain (“miller”) Charge

toff

Qg

Qgs

VDD ≈ 480 V, VGS = 10 V, ID = 12 A

Qgd

Source−Drain Diode Ratings and Characteristics (Ta = 25°C)

Characteristics

Continuous drain reverse current

(Note 1)

Pulse drain reverse current

(Note 1)

Forward voltage (diode)

Reverse recovery time

Reverse recovery charge

Symbol

IDR

IDRP

VDSF

trr

Qrr

Test Condition

—

—

IDR = 12 A, VGS = 0 V

IDR = 12 A, VGS = 0 V

dIDR / dt = 100 A / μs

Marking

2SK2699

Min Typ. Max Unit

—

—

±10

μA

±30 —

—

V

—

—

100

μA

600

—

—

V

2.0

—

4.0

V

—

0.5 0.65

Ω

6.0 11.0 —

S

— 2600 —

— 270 —

pF

— 820 —

—

45

—

—

75

—

ns

—

65

—

— 270 —

—

58

—

—

37

—

nC

—

21

—

Min Typ. Max Unit

—

—

12

A

—

—

48

A

—

—

−1.7

V

— 460 —

ns

—

4.8

—

μC

TOSHIBA

K2699

Part No. (or abbreviation code)

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

2

2006-11-08

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