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BAW56S,125 Datasheet PDF : 15 Pages
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NXP Semiconductors
BAV756S; BAW56 series
High-speed switching diodes
Table 6. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
IFRM
repetitive peak forward
-
current
IFSM
non-repetitive peak forward square wave
[1]
current
tp = 1 µs
-
tp = 1 ms
-
tp = 1 s
-
Ptot
total power dissipation
[2]
BAV756S
Ts = 60 °C
-
BAW56
Tamb ≤ 25 °C
-
BAW56M
Tamb ≤ 25 °C
[3] -
BAW56S
Ts = 60 °C
-
BAW56T
Ts = 90 °C
[4] -
BAW56W
Tamb ≤ 25 °C
-
Per device
IF
forward current
BAV756S
Ts = 60 °C
-
BAW56
Tamb ≤ 25 °C
-
BAW56M
Tamb ≤ 25 °C
-
BAW56S
Ts = 60 °C
-
BAW56T
Ts = 90 °C
-
BAW56W
Tamb ≤ 25 °C
-
Tj
junction temperature
-
Tamb
ambient temperature
−65
Tstg
storage temperature
−65
Max Unit
500
mA
4
A
1
A
0.5
A
350
mW
250
mW
250
mW
350
mW
170
mW
200
mW
100
mA
125
mA
75
mA
100
mA
75
mA
130
mA
150
°C
+150 °C
+150 °C
[1] Tj = 25 °C prior to surge.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[3] Reflow soldering is the only recommended soldering method.
[4] Single diode loaded.
6. Thermal characteristics
Table 7. Thermal characteristics
Symbol Parameter
Per diode
Rth(j-a)
thermal resistance from
junction to ambient
BAW56
BAW56M
BAW56W
Conditions
in free air
Min Typ Max Unit
[1]
-
-
500 K/W
[2] -
-
500 K/W
-
-
625 K/W
BAV756S_BAW56_SER_5
Product data sheet
Rev. 05 — 26 November 2007
© NXP B.V. 2007. All rights reserved.
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