BAV756S,135(2015) 데이터 시트보기 (PDF) - NXP Semiconductors.
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BAV756S,135 Datasheet PDF : 16 Pages
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Nexperia
BAV756S; BAW56 series
High-speed switching diodes
103
IF
(mA)
102
006aab109
10
(1) (2) (3) (4)
1
10−1
0.2
0.6
1.0
1.4
VF (V)
(1) Tamb = 150 C
(2) Tamb = 85 C
(3) Tamb = 25 C
(4) Tamb = 40 C
Fig 1. Forward current as a function of forward
voltage; typical values
102
IR
(μA)
(1)
10
006aab110
1
(2)
10−1
(3)
10−2
10−3
10−4
(4)
10−5
0
20
40
60
80
100
VR (V)
(1) Tamb = 150 C
(2) Tamb = 85 C
(3) Tamb = 25 C
(4) Tamb = 40 C
Fig 3. Reverse current as a function of reverse
voltage; typical values
102
IFSM
(A)
10
mbg704
1
10−1
1
10
102
103
104
tp (μs)
Based on square wave currents.
Tj = 25 C; prior to surge
Fig 2. Non-repetitive peak forward current as a
function of pulse duration; maximum values
2.5
Cd
(pF)
2.0
mbh191
1.5
1.0
0.5
0
0
5
10
15
f = 1 MHz; Tamb = 25 C
20
25
VR (V)
Fig 4. Diode capacitance as a function of reverse
voltage; typical values
BAV756S_BAW56_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 18 March 2015
© Nexperia B.V. 2017. All rights reserved
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