BAW56S,125(2015) 데이터 시트보기 (PDF) - NXP Semiconductors.
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BAW56S,125 Datasheet PDF : 16 Pages
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Nexperia
BAV756S; BAW56 series
High-speed switching diodes
Table 7.
Symbol
Rth(j-sp)
Thermal characteristics …continued
Parameter
Conditions
thermal resistance from
junction to solder point
BAV756S
BAW56
BAW56S
BAW56T
BAW56W
Min Typ Max Unit
-
-
255 K/W
-
-
360 K/W
-
-
255 K/W
-
-
350 K/W
-
-
300 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
7. Characteristics
Table 8. Characteristics
Tamb = 25 C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ
Per diode
VF
forward voltage
[1]
IF = 1 mA
-
-
IF = 10 mA
-
-
IF = 50 mA
-
-
IF = 150 mA
-
-
IR
reverse current
VR = 25 V
-
-
VR = 80 V
-
-
VR = 25 V; Tj = 150 C -
-
VR = 80 V; Tj = 150 C -
-
Cd
diode capacitance
VR = 0 V; f = 1 MHz
-
-
trr
reverse recovery time
[2] -
-
VFR
forward recovery voltage
[3] -
-
[1] Pulse test: tp 300 s; 0.02.
[2] When switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA.
[3] When switched from IF = 10 mA; tr = 20 ns.
Max Unit
715 mV
855 mV
1
V
1.25 V
30 nA
0.5 A
30 A
150 A
2
pF
4
ns
1.75 V
BAV756S_BAW56_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 18 March 2015
© Nexperia B.V. 2017. All rights reserved
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