BAV756S,125(2015) 데이터 시트보기 (PDF) - NXP Semiconductors.

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BAV756S,125
(Rev.:2015)

High-speed switching diodes

NXP Semiconductors. 

BAV756S; BAW56 series

High-speed switching diodes

Rev. 6 — 18 March 2015

Product data sheet

1. Product profile

1.1 General description

High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD)

plastic packages.

Table 1. Product overview

Type number Package

Nexperia JEITA

BAV756S

SOT363 SC-88

BAW56

BAW56M

SOT23

SOT883

-

SC-101

BAW56S

SOT363 SC-88

BAW56T

BAW56W

SOT416

SOT323

SC-75

SC-70

JEDEC

-

Package

configuration

very small

TO-236AB small

-

leadless ultra

small

-

very small

-

ultra small

-

very small

Configuration

quadruple common

anode/common cathode

dual common anode

dual common anode

quadruple common

anode/common anode

dual common anode

dual common anode

1.2 Features and benefits

 High switching speed: trr  4 ns

 Low leakage current

 Small SMD plastic packages

 Low capacitance: Cd  2 pF

 Reverse voltage: VR  90 V

 AEC-Q101 qualified

1.3 Applications

 High-speed switching

 General-purpose switching

1.4 Quick reference data

Table 2. Quick reference data

Symbol Parameter

Per diode

IR

reverse current

VR

reverse voltage

trr

reverse recovery time

Conditions

Min Typ

VR = 80 V

-

-

-

-

[1] -

-

[1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA.

Max

0.5

90

4

Unit

A

V

ns

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