BZV55-B4V3(2007) 데이터 시트보기 (PDF) - NXP Semiconductors.
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BZV55-B4V3 Datasheet PDF : 12 Pages
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NXP Semiconductors
BZV55 series
Voltage regulator diodes
103
PZSM
(W)
102
mbg801
300
IF
(mA)
200
mbg781
(1)
10
100
(2)
1
10−1
1
10
tp (ms)
(1) Tj = 25 °C (prior to surge)
(2) Tj = 150 °C (prior to surge)
Fig 2. Non-repetitive peak reverse power dissipation
as a function of pulse duration; maximum
values
0
0.6
0.8
Tj = 25 °C
1
VF (V)
Fig 3. Forward current as a function of forward
voltage; typical values
0
SZ
(mV/K)
−1
mbg783
4V3
3V9
3V6
−2
3V3
3V0
−3
0
2V4
2V7
20
40 IZ (mA) 60
BZV55-B/C2V4 to BZV55-B/C4V3
Tj = 25 °C to 150 °C
Fig 4. Temperature coefficient as a function of
working current; typical values
10
SZ
(mV/K)
5
0
mbg782
12
11
10
9V1
8V2
7V5
6V8
6V2
5V6
5V1
4V7
−5
0
4
8
12
16
20
IZ (mA)
BZV55-B/C4V7 to BZV55-B/C12
Tj = 25 °C to 150 °C
Fig 5. Temperature coefficient as a function of
working current; typical values
BZV55_SER_4
Product data sheet
Rev. 04 — 19 July 2007
© NXP B.V. 2007. All rights reserved.
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