BZV55-C6V2(2007) 데이터 시트보기 (PDF) - NXP Semiconductors.
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BZV55-C6V2 Datasheet PDF : 12 Pages
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NXP Semiconductors
BZV55 series
Voltage regulator diodes
Table 9. Characteristics per type; BZV55-B27 to BZV55-C75
Tj = 25 °C unless otherwise specified.
BZV55-x Sel
xx
Working
voltage
VZ (V)
Differential resistance
rdif (Ω)
Temperature
coefficient
SZ (mV/K)
IZ = 2 mA
IZ = 0.5 mA IZ = 2 mA IZ = 2 mA
Min Max Typ Max Typ Max Min Typ Max
27
B
26.5 27.5 65 300 25 80 18.0 22.7 25.3
C
25.1 28.9
30
B
29.4 30.6 70 300 30 80 20.6 25.7 29.4
C
28.0 32.0
33
B
32.3 33.7 75 325 35 80 23.3 28.7 33.4
C
31.0 35.0
36
B
35.3 36.7 80 350 35 90 26.0 31.8 37.4
C
34.0 38.0
39
B
38.2 39.8 80 350 40 130 28.7 34.8 41.2
C
37.0 41.0
43
B
42.1 43.9 85 375 45 150 31.4 38.8 46.6
C
40.0 46.0
47
B
46.1 47.9 85 375 50 170 35.0 42.9 51.8
C
44.0 50.0
51
B
50.0 52.0 90 400 60 180 38.6 46.9 57.2
C
48.0 54.0
56
B
54.9 57.1 100 425 70 200 42.2 52.0 63.8
C
52.0 60.0
62
B
60.8 63.2 120 450 80 215 58.8 64.4 71.6
C
58.0 66.0
68
B
66.6 69.4 150 475 90 240 65.6 71.7 79.8
C
64.0 72.0
75
B
73.5 76.5 170 500 95 255 73.4 80.2 88.6
C
70.0 79.0
Diode
capacitance
Cd (pF)[1]
Max
50
50
45
45
45
40
40
40
40
35
35
35
Non-repetitive
peak reverse
current
IZSM (A)[2]
Max
1.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.3
0.25
0.2
[1] f = 1 MHz; VR = 0 V
[2] tp = 100 µs; square wave; Tj = 25 °C prior to surge
BZV55_SER_4
Product data sheet
Rev. 04 — 19 July 2007
© NXP B.V. 2007. All rights reserved.
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