BZV55-B9V1(2007) 데이터 시트보기 (PDF) - NXP Semiconductors.
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BZV55-B9V1 Datasheet PDF : 12 Pages
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NXP Semiconductors
BZV55 series
Voltage regulator diodes
3. Ordering information
4. Marking
Table 3. Ordering information
Type number
Package
Name
Description
BZV55-B2V4 to -
BZV55-C75[1]
hermetically sealed glass surface-mounted
package; 2 connectors
[1] The series consists of 74 types with nominal working voltages from 2.4 V to 75 V.
Version
SOD80C
Table 4. Marking codes
Type number
BZV55-B2V4 to BZV55-C75
[1] blue: made in China
yellow: made in Philippines
5. Limiting values
Marking code[1]
marking band
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
IF
forward current
-
IZSM
non-repetitive peak reverse
[1] -
current
PZSM
Ptot
Tstg
Tj
non-repetitive peak reverse
power dissipation
total power dissipation
storage temperature
junction temperature
Tamb ≤ 50 °C
Ttp ≤ 50 °C
[1] tp = 100 µs; square wave; Tj = 25 °C prior to surge
[2] Device mounted on a ceramic substrate of 10 × 10 × 0.6 mm.
[1] -
[2] -
[2] -
−65
−65
6. Thermal characteristics
Max
Unit
250
mA
see
Table 8
and 9
40
W
400
mW
500
mW
+200
°C
+200
°C
Table 6.
Symbol
Rth(j-a)
Rth(j-t)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to tie-point
Conditions
in free air
[1] Device mounted on a ceramic substrate of 10 × 10 × 0.6 mm.
Min Typ Max Unit
[1] -
-
380 K/W
-
-
300 K/W
BZV55_SER_4
Product data sheet
Rev. 04 — 19 July 2007
© NXP B.V. 2007. All rights reserved.
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