P4C116 데이터 시트보기 (PDF) - Performance Semiconductor
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P4C116 Datasheet PDF : 8 Pages
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P4C116
MAXIMUM RATINGS(1)
Symbol
Parameter
VCC
Power Supply Pin with
Respect to GND
V
TERM
Terminal Voltage with
Respect to GND
(up to 7.0V)
TA
Operating Temperature
Value Unit
–0.5 to +7 V
–0.5 to
V +0.5 V
CC
–55 to +125 °C
Symbol Parameter
T
BIAS
Temperature Under
Bias
TSTG
Storage Temperature
PT
Power Dissipation
IOUT
DC Output Current
Value Unit
–55 to +125 °C
–65 to +150 °C
1.0
W
50
mA
RECOMMENDED OPERATING CONDITIONS
Grade(2)
Commercial
Ambient Temp
0°C to 70°C
Gnd Vcc
0V 5.0V ±10%
CAPACITANCES(4)
(VCC = 5.0V, TA = 25°C, f = 1.0MHz)
Symbol Parameter
Conditions Typ. Unit
CIN
COUT
Input Capacitance VIN = 0V
Output Capacitance VOUT= 0V
5 pF
7 pF
DC ELECTRICAL CHARACTERISTICS
Over recommended operating temperature and supply voltage(2)
Symbol
Parameter
Test Conditions
VIH Input High Voltage
VIL Input Low Voltage
VHC CMOS Input High Voltage
VLC CMOS Input Low Voltage
VCD Input Clamp Diode Voltage VCC = Min., IIN = –18 mA
VOL Output Low Voltage
(TTL Load)
IOL = +8 mA, VCC = Min.
VOH Output High Voltage
(TTL Load)
IOH = –4 mA, VCC = Min.
P4C116
Min
Max
2.2
–0.5(3)
VCC +0.5
0.8
V –0.2
CC
–0.5(3)
VCC+0.5
0.2
–1.2
0.4
2.4
ILI Input Leakage Current
VCC = Max., VIN = GND to VCC
–5
+5
ILO Output Leakage Current
VCC = Max., CS = VIH, VOUT = GND to VCC
–5
+5
I
CC
Dynamic Operating
VCC = Max., f = Max., Outputs Open
130
Current – 10, 12
I
CC
Dynamic Operating
Current – 15, 20
V = Max., f = Max., Outputs Open
CC
___
115
ICC Dynamic Operating
Current – 25, 35
V = Max., f = Max., Outputs Open
CC
___
100
ISB Standby Power Supply
CE ≥VIH, VCC = Max., f = Max., Outputs Open
___
35
Current (TTL Input Levels)
I
Standby Power Supply
SBI
CE
≥VHC,
V
CC
=
Max.,
f
=
0,
Outputs
Open
___
17
Current (CMOS Input Levels) VIN ≤VLC or VIN ≥ VHC
Unit
V
V
V
V
V
V
V
µA
µA
mA
mA
mA
mA
mA
48
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