KA78L12AZTA 데이터 시트보기 (PDF) - Fairchild Semiconductor
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KA78L12AZTA Datasheet PDF : 17 Pages
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KA78LXXA/KA78L05AA
Electrical Characteristics(KA78L06A) (Continued)
(VI = 12V, IO = 40mA, 0°C ≤ TJ ≤ 125°C, CI = 0.33μF, CO = 0.1μF, unless otherwise specified. (Note 1)
Parameter
Output Voltage
Line Regulation (Note1)
Symbol
VO
ΔVO
Load Regulation (Note1)
ΔVO
Output Voltage
VO
Quiescent Current
IQ
Quiescent Current With Line ΔIQ
Change
With Load ΔIQ
Output Noise Voltage
VN
Temperature Coefficient of VO ΔVO/ΔT
Ripple Rejection
RR
Dropout Voltage
VD
Conditions
Min.
TJ = 25°C
5.75
TJ = 25°C
8.5V ≤ VI ≤ 20V
-
9V ≤ VI ≤ 20V
-
TJ = 25°C
1mA ≤ IO ≤ 100mA
-
1mA ≤ IO ≤ 70mA
-
8.5 ≤ VI ≤ 20V, 1mA ≤ IO ≤ 40mA
5.7
8.5 ≤ VI ≤ VMAX(Note), 1mA ≤ IO ≤ 70mA 5.7
TJ = 25°C
-
TJ = 125°C
-
9 ≤ VI ≤ 20V
-
1mA ≤ IO ≤ 40mA
-
TA = 25°C, 10Hz ≤ f ≤ 100kHz
-
IO = 5mA
-
f = 120Hz, 10V ≤ VI ≤ 20V, TJ = 25°C
40
TJ = 25°C
-
Typ. Max. Unit
6.0 6.25 V
64 175 mV
54 125 mV
12.8 80 mV
5.8 40 mV
- 6.3 V
- 6.3 V
- 5.5 mA
3.9 6.0 mA
- 1.5 mA
- 0.1 mA
40 - μV/Vo
0.75 - mV/°C
46 - dB
1.7 -
V
Note:
1. The maximum steady state usable output current and input voltage are very dependent on the heat sinking and/or lead length
of the package. The data above represent pulse test conditions with junction temperature as indicated at the initiation of tests.
2. Power dissipation PD ≤ 0.75W.
3
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