NTE6401 데이터 시트보기 (PDF) - NTE Electronics

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NTE6401

Unijunction transistor.

NTE Electronics 

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Emitter Saturation Voltage

VEB1(sat) VB2B1 = 10V, IE = 50mA, Note 4 – 3.5 –

V

Modulated Interbase Current

Emitter Reverse Current

Peak Point Emitter Current

Valley Point Current

IB2(mod)

IEB20

IP

IV

VB2B1 = 10V, IE = 50mA

VB2E = 30V, IB1 = 0

VB2B1 = 25V

VB2B1 = 20V, RB2 = 100Ω

– 15 – mA

– 0.005 12 µA

–

1

5 µA

4

6

– mA

Base–One Peak Pulse Voltage

VOB1

3

5

–

V

Note 4. Use pulse techniques: Pulse Width ~ 300µs, duty cycle ≤ 2% to avoid internal heating due

to interbase modulation which may result in erroneous readings.

.230 (5.84) Dia Max

.195 (4.95) Dia Max

.210 (5.33)

Max

.030 (.762) Max

.500

(12.7)

Min

Emitter

.018 (0.45)

Base 1

45°

.041 (1.05)

Base 2/Case

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