EGF1A 데이터 시트보기 (PDF) - General Semiconductor

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EGF1A

ULTRAFAST SURFACE MOUNT RECTIFIER

General Semiconductor 

EGF1A THRU EGF1D

ULTRAFAST SURFACE MOUNT RECTIFIER

Reverse Voltage - 50 to 200 Volts Forward Current - 1.0 Ampere

TED*

EN0.060 (1.52)

PAT 0.040 (1.02)

DO-214BA

0.187 (4.75)

0.167 (4.24)

0.0105 (0.27)

0.0065 (0.17)

0.118 (3.00)

0.106 (2.69)

0.108 (2.74)

0.098 (2.49)

0.060 (1.52)

0.030 (0.76)

0.152 TYP.

0.006

0.226 (5.74)

0.196 (4.98)

0.114 (2.90)

0.094 (2.39)

Dimensions in inches and (millimeters)

*Glass-plastic encapsulation technique is covered by

Patent No. 3,996,602, brazed-lead assembly by Patent No. 3,930,306 and lead

forming by Patent No. 5,151,846

®

FEATURES

♦ Plastic package has Underwriters Laboratory

Flammability Classification 94V-0

♦ Ideal for surface mount automotive applications

♦ High temperature metallurgically bonded construction

♦ Superfast recovery times for high efficiency

♦ Glass passivated cavity-free junction

♦ Built-in strain relief

♦ Easy pick and place

♦ High temperature soldering guaranteed: 450°C/5 seconds

at terminals

♦ Complete device submersible temperature of

265°C for 10 seconds in solder bath

MECHANICAL DATA

Case: JEDEC DO-214BA molded plastic over glass body

Terminals: Solder plated, solderable per MIL-STD-750,

Method 2026

Polarity: Color band denotes cathode end

Weight: 0.0048 ounces, 0.120 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

Device Marking Code

Maximum repetitive peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forward rectified current

at TL=125°C

Peak forward surge current

8.3ms single half sine-wave superimposed on

rated load (JEDEC Method)

Maximum instantaneous forward voltage at 1.0A

Maximum DC reverse current

at rated DC blocking voltage

TA=25°C

TA=125°C

Typical reverse recovery time (NOTE 1)

Typical junction capacitance (NOTE 2)

Typical thermal resistance (NOTE 3)

Operating junction and storage temperature range

NOTES:

(1) Reverse recovery test conditions: IF=0.5A, IR=1.0A, Irr=0.25A

(2) Measured at 1.0 MHz and applied VR=4.0 Volts

(3) Thermal resistance from junction to ambient and from junction to lead

P.C.B. mounted on 0.2 x 0.2" (5.0 x 5.0mm) copper pad areas

SYMBOLS

VRRM

VRMS

VDC

I(AV)

EGF1A

EA

50

35

50

EGF1B

EB

100

70

100

EGF1C

EC

150

105

150

1.0

EGF1D

ED

200

140

200

UNITS

Volts

Volts

Volts

Amps

IFSM

VF

IR

trr

CJ

RΘJA

RΘJL

TJ,TSTG

30.0

1.0

5.0

50.0

50.0

15.0

85.0

30.0

-65 to +175

Amps

Volts

µA

ns

pF

°C/W

°C

4/98

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