2N7000_D74Z 데이터 시트보기 (PDF) - Fairchild Semiconductor

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2N7000_D74Z

N-Channel Enhancement Mode Field Effect Transistor

Fairchild Semiconductor 

Electrical Characteristics (Continued)

Symbol

Parameter

Conditions

Type

Dynamic Characteristics

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

VDS = 25 V, VGS = 0 V, All

f = 1.0 MHz

All

All

ton Turn-On Time

toff Turn-Off Time

VDD = 15 V, RL = 25 , 2N7000

ID = 500 mA,

VGS= 10 V, RGEN = 25

VDD = 30 V, RL = 150 , 2N7002

ID = 200 mA, VGS= 10 V, NDS7002A

RGEN = 25

VDD = 15 V, RL = 25 , 2N7000

ID = 500 mA, VGS= 10 V,

RGEN = 25

VDD = 30 V, RL = 150 , 2N7002

ID = 200 mA, VGS= 10 V, NDS7002A

RGEN = 25

Drain-Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain-Source Diode Forward 2N7002

Current

NDS7002A

ISM Maximum Pulsed Drain-Source Diode Forward

Current

VSD

Drain-Source Diode

Forward Voltage

VGS

IS =

=0

115

V,

mA(1)

VGS

IS =

=0

400

V,

mA(1)

2N7002

NDS7002A

2N7002

NDS7002A

Note:

1. Pulse test : Pulse Width ≤ 300 μs, Duty Cycel ≤ 2 %.

Min. Typ. Max. Unit

20

50

pF

11

25

4

5

ns

10

20

ns

10

20

115

mA

280

0.8

A

1.5

0.88 1.5

V

0.88 1.2

© 1998 Fairchild Semiconductor Corporation

2N7000 / 2N7002 / NDS7002A Rev. 2.10

4

www.fairchildsemi.com

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