STTH1506TPI 데이터 시트보기 (PDF) - STMicroelectronics
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STTH1506TPI Datasheet PDF : 5 Pages
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STTH1506TPI
THERMAL AND POWER DATA
Symbol
Parameter
Rth (j-c) Junction to case
Rth (c)
Rth (j-c) Junction to case
P1 Conduction power dissipation for
both diodes
Test conditions
Per diode
Coupling
Total
IF(AV) = 15 A δ = 0.5
Tc = 70°C
Value
2.9
0.3
1.6
50
Unit
°C/W
W
STATIC ELECTRICAL CHARACTERISTICS (for both diodes)
Symbol
IR*
VF**
Parameter
Reverse leakage cur-
rent
Forward voltage drop
Tests Conditions
VR = VRRM
Tj = 25°C
Tj = 125°C
IF = 15 A
Tj = 25°C
Min.
Tj = 125°C
Pulse test: * tp = 5ms, δ < 2%
** tp = 380µs, δ < 2%
To evaluate the maximum conduction losses use the following equation:
P = 1.8 x IF(AV) + 0.053 x IF2(RMS)
Typ.
30
2.1
Max.
20
200
3.6
2.6
Unit
µA
V
RECOVERY CHARACTERISTICS
Symbol Parameter
Tests Conditions
trr
Reverse recovery IF = 0.5 A Irr = 0.25A
time
IR = 1 A
Tj = 25°C
IF = 1 A dIF/dt = - 50A/µs
VR = 30 V
IRM
Sfactor
Reverse recovery VR = 400 V IF = 15 A
current
dIF/dt = -200 A/µs
Tj = 125°C
Min.
Typ. Max. Unit
16
ns
35
4.8 6.0 A
0.4
-
TURN-ON SWITCHING CHARACTERISTICS
Symbol Parameter
Tests Conditions
Min. Typ. Max. Unit
tfr
Forward
IF = 15 A dIF/dt = 100A/µs, Tj = 25°C
recovery time
VFR = 1.1 x VFmax
VFP Forward
IF = 15 A dIF/dt = 100 A/µs Tj = 25°C
recovery voltage
200 ns
6
V
2/5
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