MJE5850 데이터 시트보기 (PDF) - ON Semiconductor
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MJE5850 Datasheet PDF : 8 Pages
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MJE5850, MJE5851,
MJE5852
MJE5851 and MJE5852 are Preferred Devices
SWITCHMODEt Series
PNP Silicon Power
Transistors
The MJE5850, MJE5851 and the MJE5852 transistors are designed
for high−voltage, high−speed, power switching in inductive circuits
where fall time is critical. They are particularly suited for line operated
SWITCHMODE applications.
Features
• Switching Regulators
• Inverters
• Solenoid and Relay Drivers
• Motor Controls
• Deflection Circuits
• Fast Turn−Off Times
♦ 100 ns Inductive Fall Time @ 25_C (Typ)
♦ 125 ns Inductive Crossover Time @ 25°C (Typ)
• Operating Temperature Range −65 to +150_C
• 100_C Performance Specified for:
♦ Reversed Biased SOA with Inductive Loads
♦ Switching Times with Inductive Loads
♦ Saturation Voltages
♦ Leakage Currents
• Pb−Free Packages are Available*
http://onsemi.com
8 AMPERE
PCP SILICON
POWER TRANSISTORS
300−350−400 VOLTS
80 WATTS
MARKING
DIAGRAM
1
23
TO−220AB
CASE 221A−09
STYLE 1
MJE585xG
AY WW
MJE585x
G
A
Y
WW
= Device Code
x = 0, 1, or 2
= Pb−Free Package
= Assembly Location
= Year
= Work Week
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
1
February, 2006 − Rev. 4
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Publication Order Number:
MJE5850/D
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