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2N6547

SWITCHMODE Series NPN Silicon Power Transistors

ON Semiconductor 

2N6547

TYPICAL ELECTRICAL CHARACTERISTICS

100

70

TJ = 150°C

50

30

25°C

20

-ā55°C

10

7.0

VCE = 2.0 V

VCE = 10 V

5.0

0.2 0.3 0.5

1.0

2.0 3.0 5.0 7.0 10

20

IC, COLLECTOR CURRENT (AMP)

Figure 1. DC Current Gain

2.0

TJ = 25°C

1.6

1.2

IC = 2.0 A

5.0 A

10 A

15 A

0.8

0.4

0

0.07 0.1

0.2 0.3 0.5 0.7 1.0 2.0 3.0

IB, COLLECTOR CURRENT (AMP)

5.0 7.0

Figure 2. Collector Saturation Region

1.4

TJ = 25°C

1.2

1.0

0.8

VBE(sat) @ IC/IB = 5.0

0.6 VBE(on) @ VCE = 2.0 V

0.4

0.2

VCE(sat) @ IC/IB = 5

00.2 0.3

0.5 1.0 2.0 3.0 5.0 7.0 10 20

IC, COLLECTOR CURRENT (AMP)

Figure 3. “On” Voltages

2.5

2.0

1.5

*APPLIES FOR IC/IB v

hFEĂ@ĂVCEĂ +Ă 2.0ĂV

3

1.0

0.5

*θVC for VCE(sat)

25°C to 150°C

0

-ā0.5

-ā1.0

-ā1.5

θVB for VBE

-ā2.0

-ā55°C to 25°C

25°C to 150°C

-ā55°C to 25°C

-ā2.50.2 0.3 0.5 0.7 1.0

2.0 3.0 5.0 7.0 10 20

IC, COLLECTOR CURRENT (AMP)

Figure 4. Temperature Coefficients

3.0 k

2.0 k

tr

1.0 k

700

500

VCC = 250 V

IC/IB = 5.0

TJ = 25°C

300

200

td @ VBE(off) = 5.0 V

100

70

50

30

0.02 0.05 0.1 0.2

0.5 1.0 2.0

5.0 10 20

IC, COLLECTOR CURRENT (AMP)

Figure 5. Turn–On Time

10 k

7.0 k

5.0 k

ts

3.0 k

2.0 k

1.0 k

700

500

tf

300

200

VCC = 250 V

IC/IB = 5.0

IB1 = IB2

TJ = 25°C

1000.02 0.05 0.1 0.2

0.5 1.0 2.0

5.0 10 20

IC, COLLECTOR CURRENT (AMP)

Figure 6. Turn–Off Time

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