ER2K(2006) 데이터 시트보기 (PDF) - Diotec Semiconductor Germany

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ER2K
(Rev.:2006)

Superfast Switching Surface Mount Si-Diodes

Diotec Semiconductor Germany  

Characteristics

Type

Typ

ER2A...ER2D

ER2G

ER2J...ER2M

Reverse recovery time

Sperrverzugszeit

trr [ns] 1)

< 35

< 35

< 75

ER2A ... ER2M

Kennwerte

Forward voltage

Durchlass-Spannung

VF [V] at / bei IF [A]

< 1.0

2

< 1.25

2

< 1.7

2

Leakage current

Sperrstrom

Tj = 25°C

VR = VRRM

IR

Tj = 100°C

VR = VRRM

IR

Thermal resistance junction to ambient air

RthA

Wärmewiderstand Sperrschicht – umgebende Luft

Thermal resistance junction to terminal

RthL

Wärmewiderstand Sperrschicht – Anschluss

< 5 µA

< 300 µA

< 50 K/W 2)

< 15 K/W

120

[%]

100

80

60

40

20

IFAV

0

0 TT 50

100

150 [°C]

Rated forward current vs. temp. of the terminals

Zul. Richtstrom in Abh. v. d. Temp. der Terminals

10

[A]

ER2A...D

1

ER2G

ER2J...M

0.1

10-2

IF

10-3

Tj = 25°C

VF

[V]

Forward characteristics (typical values)

Durchlasskennlinien (typische Werte)

1 IF = 0.5 A through/über IR = 1 A to/auf IR = 0.25 A

2 Mounted on P.C. board with 50 mm2 copper pads at each terminal

Montage auf Leiterplatte mit 50 mm2 Kupferbelag (Lötpad) an jedem Anschluss

2

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© Diotec Semiconductor AG

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