R4332(2006) 데이터 시트보기 (PDF) - Hamamatsu Photonics
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R4332 Datasheet PDF : 4 Pages
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PHOTOMULTIPLIER TUBES
R3788, R4332
High Sensitivity, Bialkali Photocathode
28 mm (1-1/8 Inch) Diameter, 9-Stage, Side-On Type
FEATURES
GWide Spectral Response
R3788 ................................................... 185 nm to 750 nm
R4332 ................................................... 160 nm to 750 nm
GHigh Cathode Sensitivity
Luminous ................................................. 120 µA/lm Typ.
Radiant at 420 nm ...................................... 90 mA/W Typ.
Quantum Efficiency at 210 nm ........... 40 % Typ. (R4332)
GHigh Anode Sensitivity (at 1000 V)
Luminous .................................................. 1200 A/lm Typ.
Radiant at 420 nm ............................... 9.0 × 105 A/W Typ.
APPLICATIONS
GFluorescence Spectrophotometers
GEmission Spectrophotometers
GAtomic Absorption Spectrophotometers
SPECIFICATIONS
GENERAL
Parameter
Description/Value
Unit
Spectral
R3788
185 to 750
nm
Response R4332
160 to 750
nm
Wavelength of Maximum Response
420
nm
Photocathode
MateriaI
Minimum Effective Area
Bialkali
8 × 24
—
mm
Window
R3788
UV glass
—
Material
R4332
Fused silica
—
Secondary Emitting Surface
Bialkali
—
Dynode
Structure
Circular-cage
—
Number of Stages
9
—
Direct Interelectrode Anode to Last Dynode
4
pF
Capacitances
Anode to All Other Electrodes
6
pF
Base
11-pin base JEDEC No. B11-88 —
Weight
Operating Ambient Temperature
Storage Temperature
Approx. 45
g
-30 to +50
°C
-30 to +50
°C
SuitabIe Socket
E678–11A (Sold Separately) —
SuitabIe Socket Assembly
E717–63 (Sold Separately)
E717–74 (Sold Separately)
—
Figure 1: Typical Spectral Response
TPMSB0081EA
100
R4332
CATHODE RADIANT
SENSITIVITY
QUANTUM
EFFICIENCY
10
R3788
1
0.1
0.01
100 200 300 400 500 600 700 800
WAVELENGTH (nm)
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K.
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