DS1213B 데이터 시트보기 (PDF) - Dallas Semiconductor -> Maxim Integrated

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DS1213B

SmartSocket 16k/64k

Dallas Semiconductor -> Maxim Integrated 

DS1213B

SmartSocket 16k/64k

www.dalsemi.com

FEATURES

Accepts standard 2K x 8 or 8K x 8 CMOS

static RAMs

Embedded lithium energy cell retains RAM

data

Self-contained circuitry safeguards data

Data retention time is greater than 10 years

with proper RAM selection

IC socket permits upgrading from 2K x 8 to

8K RAM

Proven gas-tight socket contacts

Operating temperature range 0°C to 70°C

PIN ASSIGNMENT

1

28 VCC

2

27

3

26 VCC

4

25

5

24

6

23

7

22

8

21

9

20 CE

10

19

11

18

12

17

13

16

GND 14

15

28-Pin Intelligent Socket

PIN DESCRIPTION

CE

- Conditioned Chip Enable

VCC

GND

- Switched VCC

- Ground

All pins pass through except 20, 26 and 28.

DESCRIPTION

The DS1213B SmartSocket is a 28-pin, 600 mil DIP socket with a built-in CMOS controller circuit and

an embedded lithium energy source. It accepts either 24-pin 2K x 8 (lower-justified) or 28-pin 8K x 8

JEDEC bytewide CMOS static RAM. When the socket is mated with a CMOS RAM, it provides a

complete solution to problems associated with memory volatility. The Smart-Socket monitors incoming

VCC for an out-of-tolerance condition. When such a condition occurs, the internal lithium energy source is

automatically switched on and write protection is unconditionally enabled to prevent data corruption.

Using the SmartSocket saves printed circuit board space since the SRAM/SmartSocket combination

occupies no more area than the SRAM alone. The SmartSocket modifies only pins 20, 26 and 28, to

nonvolatize the RAM. All other pins are passed straight through.

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