BB601M 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics

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BB601M

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Hitachi -> Renesas Electronics 

Main Characteristics

BB601M

Test Circuit for Operating Items (I D(op) , |yfs|, Ciss, Coss, Crss, NF, PG)

VG2

Gate 2

RG

VG1

Gate 1

Drain

A

ID

Source

Application Circuit

VAGC = 4 to 0.3 V

BBFET

V DS = 5 V

RFC

Output

Input

RG

V GG = 5 V

3

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