5080H3 데이터 시트보기 (PDF) - Power Innovations
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5080H3 Datasheet PDF : 15 Pages
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TISP5070H3BJ, TISP5080H3BJ, TISP5110H3BJ, TISP5150H3BJ
FORWARD-CONDUCTING
UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
JANUARY 1998 - REVISED MARCH 1999
absolute maximum ratings, TA = 25°C (unless otherwise noted)
RATING
‘5070
Repetitive peak off-state voltage, (see Note 1)
‘5080
‘5110
‘5150
Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4)
2/10 µs (GR-1089-CORE, 2/10 µs voltage wave shape)
8/20 µs (IEC 61000-4-5, 1.2/50 µs voltage, 8/20 current combination wave generator)
10/160 µs (FCC Part 68, 10/160 µs voltage wave shape)
5/200 µs (VDE 0433, 10/700 µs voltage wave shape)
0.2/310 µs (I3124, 0.5/700 µs voltage wave shape)
5/310 µs (ITU-T K20/21, 10/700 µs voltage wave shape)
5/310 µs (FTZ R12, 10/700 µs voltage wave shape)
10/560 µs (FCC Part 68, 10/560 µs voltage wave shape)
10/1000 µs (GR-1089-CORE, 10/1000 µs voltage wave shape)
Non-repetitive peak on-state current (see Notes 2, 3 and 5)
20 ms (50 Hz) full sine wave
16.7 ms (60 Hz) full sine wave
1000 s 50 Hz/60 Hz a.c.
Initial rate of rise of on-state current, Exponential current ramp, Maximum ramp value < 140 A
Junction temperature
Storage temperature range
SYMBOL
VDRM
ITSP
ITSM
diT/dt
TJ
Tstg
VALUE
- 58
- 65
- 80
-120
UNIT
V
500
300
250
220
A
200
200
200
160
100
55
60
2.1
400
-40 to +150
-65 to +150
A
A/µs
°C
°C
NOTES: 1. See Figure 9 for voltage values at lower temperatures.
2. Initially the TISP5xxxH3BJ must be in thermal equilibrium with TJ = 25°C.
3. The surge may be repeated after the TISP5xxxH3BJ returns to its initial conditions.
4. See Figure 10 for current ratings at other temperatures.
5. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths. See Figure 8 for the current ratings at other durations. Derate current values at -0.61 %/°C for ambient temperatures
above 25 °C
electrical characteristics for terminal pair, TA = 25°C (unless otherwise noted)
IDRM
PARAMETER
Repetitive peak off-
state current
VD = VDRM
TEST CONDITIONS
V(BO) Breakover voltage
dv/dt = -750 V/ms, RSOURCE = 300 Ω
V(BO)
I(BO)
VF
VFRM
VT
IH
Impulse breakover
voltage
Breakover current
Forward voltage
Peak forward recovery
voltage
On-state voltage
Holding current
dv/dt ≥ -1000 V/µs, Linear voltage ramp,
Maximum ramp value = -500 V
di/dt = -20 A/µs, Linear current ramp,
Maximum ramp value = -10 A
dv/dt = -750 V/ms, RSOURCE = 300 Ω
IF = 5 A, tW = 500 µs
dv/dt ≤ +1000 V/µs, Linear voltage ramp,
Maximum ramp value = +500 V
di/dt = +20 A/µs, Linear current ramp,
Maximum ramp value = +10 A
IT = -5 A, tW = 500 µs
IT = -5 A, di/dt = +30 mA/ms
MIN TYP MAX UNIT
TA = 25°C
TA = 85°C
‘5070
-5
µA
-10
-70
‘5080
‘5110
-80
V
-110
‘5150
-150
‘5070
-80
‘5080
‘5110
-90
V
-120
‘5150
-160
-0.15
-0.6
A
‘5070 thru ‘5150
3
V
‘5070 thru ‘5150
5
V
-0.15
-3
V
-0.6
A
PRODUCT INFORMATION
2
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