NTE106 데이터 시트보기 (PDF) - NTE Electronics

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NTE106

Silicon PNP Transistor Switching Transistor

NTE Electronics 

NTE106

Silicon PNP Transistor

Switching Transistor

Absolute Maximum Ratings:

Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V

Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V

Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5V

Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA

Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.36W

Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.06mW/°C

Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2W

Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.9mW/°C

Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

OFF Characteristics

Collector–Emitter Breakdown Voltage

Collector–Base Breakdown Voltage

Emitter–Base Breakdown Voltage

Collector Cutoff Current

Base Current

ON Characteristics

V(BR)CEO IC = 3mA, IB = 0, Note 1

V(BR)CES IC = 100µA, VBE = 0

V(BR)CBO IC = 100µA, IE = 0

V(BR)EBO IE = 100µA, IC = 0

ICES VCE = 8V, VBE = 0

VCE = 8V, VBE = 0, TA = +125°C

IB

VCE = 8V, VBE = 0

15 – – V

15 – – V

15 – – V

4.5 5.9 – V

– – 10 nA

– – 5 µA

– – 1 nA

DC Current Gain

hFE IC = 1mA, VCE = 500mV

35 – –

IC = 10mA, VCE = 300mV

50 – 120

IC = 10mA, VCE = 300mV, TA = –55°C 20 – –

IC = 50mA, VCE = 1V, Note 1

40 – –

Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.

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