NTE16001 데이터 시트보기 (PDF) - NTE Electronics

부품명

상세내역

일치하는 목록

NTE16001

Silicon NPN Transistor Video IF Amp

NTE Electronics 

NTE16001

Silicon NPN Transistor

Video IF Amp

Features:

D High Transistion Frequency

D Good Linearity of DC Current Gain

D An M Type Mold package that Allows Easy Manual and Automatic Insertion. Can be Firmly

Mounted Flush to PC Board Surface.

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)

Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V

Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V

Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V

Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA

Collector Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mW

Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Collector Cutoff Current

Collector–Base Voltage

Collector–Emitter Voltage

Emitter–Base Voltage

DC Current Gain

Collector–Emitter Saturation Volatge

Transistion Frequency

ICEO

VCBO

VCEO

VEBO

hFE

VCE(sat)

fT

VCE = 20V, IB = 0

IC = 10µA, IE = 0

IC = 1mA, IB = 0

IE = 10µA, IC = 0

VCB = 10V, IE = –10mA

IC = 20mA, IB = 2mA

VCB = 10V, IE = –10mA, f =

100MHz

– – 10 µA

45 – – V

35 – – V

4––V

20 50 100

– – 0.5 V

300 500 – MHz

Small–Signal Reverse Transfer Capaci-

tance

Cre VCE = 10V, IC = 1mA

– – 1.5 pF

Power Gain

PG VCB = 10V, IE = –10mA, f = 58MHz – 18 – dB

Share Link: