NTE2561 데이터 시트보기 (PDF) - NTE Electronics
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NTE2561 Datasheet PDF : 2 Pages
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NTE2561
Silicon NPN Transistor
Video Amplifier
Features:
D High Gain–Bandwidth Product
D High Breakdown Voltage
D Large Current
D Small Reverse Transfer Capacitance
Applications:
D Wide–Band Amplifiers
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Peak (Pulse) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0A
Collector Dissipation, PC
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.75W
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain–Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
ICBO
IEBO
hFE
fT
Cob
Cre
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCB = 80V, IE = 0
VEB = 2V, IC = 0
VCE = 10V, IC = 50mA
VCE = 10V, IC = 100mA
VCE = 10V, IC = 100mA
VCB = 30V, f = 1MHz
VCB = 30V, f = 1MHz
IC = 300mA, IB = 30mA
IC = 300mA, IB = 30mA
IC = 10µA, IE = 0
IC = 1mA, RBE = ∞
IE = 100µA, IC = 0
Min Typ Max Unit
– – 0.1 µA
– – 5.0 µA
30 – 200
20 – –
– 1.2 – GHz
– 4.4 – pF
– 3.8 – pF
– – 0.6 V
– – 1.2 V
100 – – V
80 – – V
3––V
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