NTE182 데이터 시트보기 (PDF) - NTE Electronics

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NTE182

Silicon Complementary Transistors General Purpose Amplifier, Switch

NTE Electronics 

Electrical Characteristics (Cont’d): (TC =+25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

ON Characteristics (Note 1)

DC Current Gain

Base–Emitter ON Voltage

Collector–Emitter Saturation Voltage

Dynamic Characteristics

hFE

VBE(on)

VCE(sat)

IC = 4A, VCE = 4V

IC = 10A, VCE = 4V

IC = 4A, VCE = 4V

IC = 4A, IB = 400mA

IC = 10A, IB = 3.3A

20 – 100

5.0 – –

– – 1.8 V

– – 1.1 V

– – 8.0 V

Current Gain–Bandwidth Product

fT IC = 500mA, VCE = 10V,

f = 1MHz

2.0 – – MHz

Note 1. Pulse Test: Pulse Width ≤ 300µs. Duty Cycle ≤ 2%.

.530 (13.4) Max

.143 (3.65) Dia Thru

.668

(17.0)

Max

E

B

.655

(16.6)

Max

.166 (4.23)

C (Heat Sink Area)

Heat Sink Contact

Area (Bottom)

.150 (3.82) Max

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