NTE29 데이터 시트보기 (PDF) - NTE Electronics

부품명

상세내역

일치하는 목록

NTE29

Silicon Complementary Transistors High Power, High Current Switch

NTE Electronics 

Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

ON Characteristics (Note 1)

DC Current Gain

Collector–Emitter Saturation Voltage

Base–Emitter Saturation Voltage

Base–Emitter ON Voltage

Dynamic Characteristics

hFE

VCE(sat)

VBE(sat)

VBE(on)

IC = 25A, VCE = 2V

IC = 50A, VCE = 5V

IC = 25A, IB = 2.5A

IC = 50A, IB = 10A

IC = 25A, IB = 2.5A

IC = 25A, VCE = 2V

15 – 60

5– –

–– 1 V

–– 5 V

–– 2 V

–– 2 V

Current Gain–Bandwidth Product

Output Capacitance

Small–Signal Current Gain

fT IC = 5A, VCE = 10V, f = 1MHz 2 – – MHz

Cob VCB = 10V, IE = 0, f = 0.1MHz – – 1200 pF

hfe IC = 10A, VCE = 5V, f = 1kHz 15 – –

Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.

.350 (8.89)

.135 (3.45) Max

.875 (22.2)

Dia Max

Seating

Plane

.312 (7.93) Min

.040 (1.02)

Emitter

1.187 (30.16)

.215 (5.45)

.430

(10.92)

.665

(16.9)

.156 (3.96) Dia

(2 Holes)

.188 (4.8) R Max

Base

.525 (13.35) R Max

Collector/Case

Share Link: