NTE241 데이터 시트보기 (PDF) - NTE Electronics

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NTE241

Silicon Complementary Transistors Audio Power Amplifier, Switch

NTE Electronics 

Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

ON Characteristics (Note 1)

DC Current Gain

Collector–Emitter Saturation Voltage

Base–Emitter ON Voltage

Dynamic Characteristics

hFE

VCE(sat)

VBE(on)

IC = 1.5A, VCE = 2V

IC = 4.0A, VCE = 2V

IC = 1.5A, IB = 150mA

IC = 4.0A, IB = 1A

IC = 1.5A, VCE = 2V

20 – 80

7––

– – 0.6 V

– – 1.4 V

– – 1.2 V

Small–Signal Current Gain

Current–Gain Bandwidth Product

hfe IC = 100mA, VCE = 2V, f = 1kHz

fT

IC = 1A, VCE = 4V, f = 1MHz

25 –

2.5 –

–

– MHz

Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.

.420 (10.67)

Max

.110 (2.79)

.147 (3.75)

Dia Max

.500

(12.7)

Max

.070 (1.78) Max

Base

.100 (2.54)

.250 (6.35)

Max

.500

(12.7)

Min

Emitter

Collector/Tab

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