1N5822 데이터 시트보기 (PDF) - Diotec Semiconductor Germany

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1N5822

Schottky Barrier Rectifier Diodes

Diotec Semiconductor Germany  

Characteristics

Leakage current

Sperrstrom

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

Tj = 25°C

Tj = 100°C

Thermal resistance junction to leads

Wärmewiderstand Sperrschicht – Anschlussdraht

VR = VRRM

VR = VRRM

1N5820 ... 1N5822

Kennwerte

IR

< 2 mA

IR

< 20 mA

RthA

< 25 K/W 1)

RthL

< 8 K/W

120

[%]

100

80

60

40

20

IFAV

0

0 TA 50

100

150 [°C]

Rated forward current versus ambient temperature1)

Zul. Richtstrom in Abh. von der Umgebungstemp.1)

102

[A]

1N5820

10

1N5821

1

1N5822

10-1

IF

10-2

Tj = 25°C

0.2

VF

0.6

0.8

[V] 1.2

Forward characteristics (typical values)

Durchlasskennlinien (typische Werte)

1 Valid, if leads are kept at ambient temperature at a distance of 10 mm from case

Gültig, wenn die Anschlussdrähte in 10 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden

2

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