MC-4R128FKK8K-840 데이터 시트보기 (PDF) - Elpida Memory, Inc

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MC-4R128FKK8K-840

128MB 32-bit Direct Rambus DRAM RIMM™ Module

Elpida Memory, Inc 

PRELIMINARY DATA SHEET

128MB 32-bit Direct Rambus DRAM RIMM Module

MC-4R128FKK8K (32M words × 18 bits × 2 channels)

Description

The 32-bit Direct Rambus RIMM module is a general-

purpose high-performance lines of memory modules

suitable for use in a broad range of applications

including computer memory, personal computers,

workstations, and other applications where high

bandwidth and latency are required.

The 32-bit RIMM module consists of 288Mb Direct

Rambus DRAM (Direct RDRAM) devices. These are

extremely high-speed CMOS DRAMs organized as

16M words by 18 bits. The use of Rambus Signaling

Level (RSL) technology permits the use of conventional

system and board design technologies. The 32-bit

RIMM modules support 800MHz transfer rate per pin,

resulting in total module bandwidth of 3.2GB/s.

Features

• 128MB Direct RDRAM storage and 128 banks total

on module

• 2 independent Direct RDRAM channels, 1 pass

through and 1 terminated on 32-bit RIMM module

• High speed 800MHz Direct RDRAM devices

• 232 edge connector pads with 1mm pad spacing

 Module PCB size: 133.35mm × 39.925mm ×

1.27mm

 Gold plated edge connector pads contacts

• Serial Presence Detect (SPD) support

• Operates from a 2.5V (±5%) supply

• Low power and power down self refresh modes

• Separate Row and Column buses for higher

efficiency

The 32-bit RIMM module provides two independent 18

bit memory channels to facilitate compact system

design. The "Thru" Channel enters and exits the

module to support a connection to or from a controller,

memory slot, or termination. The "Term" Channel is

terminated on the module and supports a connection

from a controller or another memory slot.

The RDRAM architecture enables the highest

sustained bandwidth for multiple, simultaneous,

randomly addressed memory transactions. The

separate control and data buses with independent row

and column control yield over 95% bus efficiency. The

RDRAM device multi-bank architecture supports up to

four simultaneous transactions per device.

Document No. E0252N10 (Ver. 1.0)

Date Published April 2002 (K) Japan

URL: http://www.elpida.com

Elpida Memory, Inc. 2002

Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.

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