MC-4R128FKE8D-845 데이터 시트보기 (PDF) - Elpida Memory, Inc

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MC-4R128FKE8D-845

Direct Rambus DRAM RIMM™ Module 128M-BYTE (64M-WORD x 18-BIT)

Elpida Memory, Inc 

MC-4R128FKE8D

Signal

RSCK

SA0

SA1

SA2

SCL

SDA

SIN

SOUT

SVDD

SWP

VCMOS

VDD

VREF

I/O

Type

Description

(2/2)

I

VCMOS Serial clock input. Clock source used to read from and write to the RDRAM

control registers.

I

SVDD

Serial Presence Detect Address 0.

I

SVDD

Serial Presence Detect Address 1.

I

SVDD

Serial Presence Detect Address 2.

I

SVDD

Serial Presence Detect Clock.

I/O

SVDD

Serial Presence Detect Data (Open Collector I/O).

I/O

VCMOS Serial I/O for reading from and writing to the control registers. Attaches to SIO0

of the first RDRAM on the module.

I/O

VCMOS Serial I/O for reading from and writing to the control registers. Attaches to SIO1

of the last RDRAM on the module.

—

—

SPD Voltage. Used for signals SCL, SDA, SWP, SA0, SA1 and SA2.

I

SVDD

Serial Presence Detect Write Protect (active high). When low, the SPD can be

written as well as read.

—

—

CMOS I/O Voltage. Used for signals CMD, SCK, SIN, SOUT.

—

—

Supply voltage for the RDRAM core and interface logic.

—

—

Logic threshold reference voltage for RSL signals.

6

Data Sheet E0078N20 (Ver 2.0)

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