UPD45128163 데이터 시트보기 (PDF) - NEC => Renesas Technology

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UPD45128163

128M-bit Synchronous DRAM 4-bank, LVTTL

NEC => Renesas Technology 

µPD45128441, 45128841, 45128163

Write command

Fig.4 Column address and write command

(/CS, /CAS, /WE = Low, /RAS = High)

If the mode register is in the burst write mode, this command sets the

burst start address given by the column address to begin the burst

write operation. The first write data in burst mode can input with this

command with subsequent data on following clocks.

CLK

CKE H

/CS

/RAS

/CAS

/WE

BA0(A13), BA1(A12)

A10

Add

Col.

Read command

Fig.5 Column address and read command

(/CS, /CAS = Low, /RAS, /WE = High)

Read data is available after /CAS latency requirements have been

met. This command sets the burst start address given by the column

address.

CLK

CKE H

/CS

/RAS

/CAS

/WE

BA0(A13), BA1(A12)

A10

Add

Col.

CBR (auto) refresh command

(/CS, /RAS, /CAS = Low, /WE, CKE = High)

This command is a request to begin the CBR (auto) refresh

operation. The refresh address is generated internally.

Before executing CBR (auto) refresh, all banks must be precharged.

After this cycle, all banks will be in the idle (precharged) state and

ready for a row activate command.

During tRC period (from refresh command to refresh or activate

command), the µPD45128xxx cannot accept any other command.

Fig.6 CBR (auto) refresh command

CLK

CKE H

/CS

/RAS

/CAS

/WE

BA0(A13), BA1(A12)

A10

Add

12

Data Sheet M12650EJBV0DS00

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