W24100 데이터 시트보기 (PDF) - Winbond

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W24100

128K x 8 CMOS STATIC RAM

Winbond 

Preliminary W24100

DATA RETENTION CHARACTERISTICS

(TA = 0° C to 70° C)

PARAMETER

SYM.

TEST CONDITIONS

VDD for Data Retention

VDR CS ≥ VDD -0.2V

Data Retention Current

IDDDR CS ≥ VDD -0.2V, VDD = 3V

Chip Deselect to Data

Retention Time

TCDR See data retention waveform

Operation Recovery Time TR

* Read Cycle Time

MIN. TYP. MAX. UNIT

2.0 -

-

V

-

-

50 µA

0

-

-

nS

TRC* -

-

nS

DATA RETENTION WAVEFORM

VDD

CS1

CS2

0.9 VDD

TCDR

VDR => 2V

CS >= VDD - 0.2V

0.9 VDD

TR

Publication Release Date: October 1999

-7-

Revision A1

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