PMBD353 데이터 시트보기 (PDF) - NXP Semiconductors.
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PMBD353 Datasheet PDF : 7 Pages
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NXP Semiconductors
Schottky barrier double diode
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
Per diode
VF
forward voltage
IR
reverse current
Cd
diode capacitance
Note
1. Pulse test: tp = 300 μs; δ = 0.02.
CONDITIONS
see Fig.2
IF = 0.1 mA
IF = 1 mA
IF = 10 mA
VR = 3 V; note 1; see Fig.3
f = 1 MHz; VR = 0; see Fig.4
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient note 1
Note
1. Refer to SOT23 standard mounting conditions.
CONDITIONS
Product data sheet
PMBD353
MAX.
UNIT
350
mV
450
mV
600
mV
0.25
μA
1
pF
VALUE
500
UNIT
K/W
2001 Oct 15
3
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