IDT71V509S66Y 데이터 시트보기 (PDF) - Integrated Device Technology
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IDT71V509S66Y
Integrated Device Technology
IDT71V509S66Y Datasheet PDF : 9 Pages
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IDT71V509
128K x 8 3.3V SYNCHRONOUS SRAM WITH ZBT™ AND FLOW-THROUGH OUTPUT
COMMERCIAL TEMPERATURE RANGE
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
VTERM(2)
VTERM(3)
Rating
Terminal Voltage with
Respect to GND
Terminal Voltage with
Respect to GND
Com’l.
Unit
–0.5 to +4.6
V
–0.5 to VDD+0.5 V
TA
Operating Temperature
0 to +70
°C
TBIAS
Temperature Under Bias –55 to +125
°C
TSTG
Storage Temperature
–55 to +125
°C
PT
Power Dissipation
1.0
W
IOUT
DC Output Current
50
mA
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
2. VDD and Input terminals only.
3. I/O terminals.
RECOMMENDED DC OPERATING
CONDITIONS
Symbol
Parameter
Min. Typ. Max. Unit
VDD Supply Voltage
3.135 3.3 3.465 V
VSS
Supply Voltage
00
0V
VIH
Input High Voltage - Inputs 2.0 — 4.6 V
VIH
Input High Voltage - I/O
2.0 — VDD+0.3 V
VIL
Input Low Voltage
–0.3(1) —
0.8 V
NOTE:
1. VIL (min.) = –1.5V for pulse width less than 5 ns, once per cycle.
CAPACITANCE
(TA = +25°C, f = 1.0MHz, SOJ package)
Symbol
Parameter(1) Conditions Max. Unit
CIN
Input Capacitance VIN = 3dV
6 pF
CI/O
I/O Capacitance VOUT = 3dV
7
pF
NOTE:
1. This parameter is guaranteed by device characterization, but not prod-
uction tested.
DC ELECTRICAL CHARACTERISTICS OVER THE OPERATING
TEMPERATURE AND SUPPLY VOLTAGE RANGE (VDD = 3.3V ±5%)
Symbol
Parameter
Test Condition
Min.
|ILI| Input Leakage Current
|ILO| Output Leakage Current
VOL Output Low Voltage
VDD = Max., VIN = 0V to VDD
—
CS ≥ VIH, VOUT = 0V to VDD, VDD = Max.
—
IOL = 5 mA, VDD = Min.
—
VOH Output High Voltage
IOH = –5 mA, VDD = Min.
2.4
Max.
Unit
5
µA
5
µA
0.4
V
—
V
DC ELECTRICAL CHARACTERISTICS OVER THE OPERATING
TEMPERATURE AND SUPPLY VOLTAGE RANGE(1) (VDD = 3.3V ±5%, VHD = VDD - 0.2V, VLD = 0.2V)
Symbol
Parameter
Test Condition
71V509S66
IDD Operating Power
CS ≤ VIL, Outputs Open, VDD = Max.,
150
Supply Current
VIN ≥ VIH or ≤ VIL, f = fMAX(2)
ISB Standby Power
CS ≥ VIH, Outputs Open, VDD = Max.,
50
Supply Current
VIN ≥ VIH or ≤ VIL, f = fMAX(2)
ISB1 Full Standby Power
CS ≥ VHD, Outputs Open, VDD = Max.,
10
Supply Current
VIN ≥ VHD or ≤ VLD, f = 0(2)
NOTES:
1. All values are maximum guaranteed values.
2. At f = fMAX, address inputs are switching at 1/tCYC and CLK is cycling at 1/tCYC; f=0 means no input signals are changing.
71V509S50
120
45
10
Unit
mA
mA
mA
11.3
6
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