BA6129AF 데이터 시트보기 (PDF) - ROHM Semiconductor

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BA6129AF

Reset IC with battery backup function

ROHM Semiconductor 

Memory ICs

BA6129AF / BA6162 / BA6162F

•Electrical characteristics

BA6129AF (unless otherwise noted, Ta = 25°C, VRRES = VCC = 5V, RRES = 10kΩ)

Parameter

Symbol Min. Typ. Max. Unit

Conditions

No-load current dissipation

ICC

—

— 2.0 mA VCC = 5V, VBAT = 3V

I / O voltage differential 1

VSAT1

— 0.03 0.05 V VCC = 5V, VBAT = 3V, IO = – 1mA

Vo output voltage 1

VO1

4.95 4.97 —

V VCC = 5V, VBAT = 3V, IO = – 1mA

Vo output voltage 2

VO2

4.70 4.90 —

V VCC = 5V, VBAT = 3V, IO = – 15mA

Vo output voltage 3

VO3

4.50 4.86 —

V VCC = 5V, VBAT = 3V, IO = – 30mA

Detection voltage

VS

3.35 3.50 3.65 V VCC = H→L

Detection hysteresis voltage

VSH

— 100 — mV VCC = L→H

Reset output low level voltage

VRESL

—

— 0.4

V VCC = 3V

Reset leakage current

IRESH

—

—

0.1

µA VCC = 5V, VRRES = 7V

Reset operating limit voltage

VOPL

—

0.8 1.2

V VCC = H→L, VRES Ϲ 0.4V

CS output low level voltage

VCSL

—

— 0.1

V VCC = 3V, VBAT = 3V, ICS = + 1µA

CS output high level voltage

VCSH

4.9

—

—

V VCC = 5V, VBAT = 3V, ICS = – 1µA

CSB output low level voltage

VCSBL

—

— 0.1

V VCC = 5V, VBAT = 3V, ICSB = + 1µA

CSB output high level voltage

VCSBH Vo – 0.1 —

—

V VCC = 3V, VBAT = 3V, ICSB = – 1µA

Detection voltage temperature characteristic VS – 0.05 — + 0.05 % / °C

—

Switching voltage

VB

3.15 3.30 3.45 V VCC = H→L, VBAT = 3V, RO = 200kΩ

Switching hysteresis voltage

VBH

— 100 — mV VCC = L→H, VBAT = 3V, RO = 200kΩ

Switching voltage temperature characteristic VB – 0.05 — + 0.05 % / °C

—

Backup current dissipation

ICCB

—

—

0.5

µA VCC = GND, VBAT = 3V

I / O voltage differential 2

VSAT2

— 0.20 0.30 V VCC = GND, VBAT = 3V, IO = – 1µA

Vo output voltage 4

VO4

2.70 2.80 —

V VCC = GND, VBAT = 3V, IO = – 1µA

Vo output voltage 5

VO5

2.60 2.67 —

V VCC = GND, VBAT = 3V, IO = – 100µA

Vo output voltage 6

Reverse current

VO6 VCC – 0.5 —

—

V IO = – 80mA

IOR

—

—

0.1

µA VCC = 5V, VBAT = GND

(Note) IO, ICS, and ICSB are + when flowing toward the pin and – when flowing away from the pin.

᭺ Not designed for radiation resistance.

3

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