PJD1616A
NPN Epitaxial Silicon Transistor
AUDIO FREQ UENCY PO WER AMPLIFIER
MEDIUM SPEED SWIT CHING
TO-92
SOT-23
ABSOLUTE MAXIMUM RATINGS (Ta = 25℃)
Rating
Symbol Rating Unit
Collector-base Voltage
Collector-Emitter Voltage
Emitter-base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
IC
PD
TJ
T stg
120
V
60
V
6
V
1
A
2
A
0.75
W
150
℃
-55~150 ℃
• PW ≤ 10ms, Duty Cycle ≤ 50%
ELECTRICAL CHARACTERISTICS (Ta=25℃)
Pin :
1.Emitter
2.Colletor
3.Base
Pin :
1.Base
2.Emitter
3.Colletor
ORDERING INFORMATION
Device
PJD1616ACT
PJD1616ACX
Operating Temperature
-20℃~+85℃
Package
T O-92
SOT -23
Characteristic
Symbol
Test Condition
Min
Typ
Max Unit
Collector Cutoff Current
ICBO
VCB=60V,IE=0
100
nA
Emitter Cutoff Current
IEBO
VEB=6V,IC=0
100
nA
*DC Current Gain
hFE1
VCE=2V,IC=100mA
135
400
hFE2
VCE=2V,IC=1A
81
**Base Emitter On Voltage
VBE (on) VCE=2V,IC=50mA
600
640
700
mV
*Collector Emitter Saturation Voltage
VCE (sat) IC=1A,IB=50mA
0.15
0.3
V
*Base Emitter Saturation Voltage
VBE (sat) IC=1A,IB=50mA
0.9
1.2
V
Output Capacitance
COb
VCB=10V,IE=0,f=1MHz
19
pF
Current Gain Bandwidth Product
fT
VCE=2V,IC=100mA
100
160
MHz
Turn On Time
ton
VCC=10V,IC=100mA
0.07
μs
Storage Time
ts
IB1= -IB2=10mA
0.95
μs
Fall Time
tf
VBE(off)= -2~-3V
0.07
μs
• Pulse Test:PW ≤ 350μs, Duty Cycle ≤ 2% Polsed
hFE(1) CLASSIFICATION
Classification
hFE(1)
Y
135-270
G
200-400
L
300-600
1-4
2002/01.rev.A