BUL66B 데이터 시트보기 (PDF) - Semelab - > TT Electronics plc
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BUL66B
Semelab - > TT Electronics plc
BUL66B Datasheet PDF : 2 Pages
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SEME
LAB
BUL66B
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
ELECTRICAL CHARACTERISTICS
VCEO(sus) Collector – Emitter Sustaining Voltage IC = 10mA
100
V(BR)CBO Collector – Base Breakdown Voltage IC = 1mA
250
V(BR)EBO Emitter – Base Breakdown Voltage IE = 1mA
10
ICBO
Collector – Base Cut–Off Current
VCB = 250V
TC = 125°C
ICEO
Collector – Emitter Cut–Off Current IB = 0
VCE = 100V
IEBO
Emitter Cut–Off Current
VEB = 9V
IC = 0
TC = 125°C
IC = 0.3A
VCE = 4V
30
hFE*
DC Current Gain
IC = 3A
VCE = 4V
25
IC = 5A
VCE = 4V
5
TC = 125°C
IC = 1A
IB = 0.1A
VCE(sat)* Collector – Emitter Saturation Voltage IC = 3A
IB = 0.3A
IC = 8A
IB = 0.8A
VBE(sat)* Base – Emitter Saturation Voltage
IC = 3A
IC = 8A
IB = 0.3A
IB = 0.8A
DYNAMIC CHARACTERISTICS
ft
Transition Frequency
IC = 0.2A
VCE = 4V
Cob
Output Capacitance
VCB = 10V f = 1MHz
* Pulse test tp = 300µs , δ < 2%
Typ.
20
100
Max. Unit
V
10
µA
100
100 µA
10
µA
100
—
0.2
0.5
V
0.8
1.0
V
1.5
MHz
pF
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 2/97
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