DAN401(2002) 데이터 시트보기 (PDF) - Diotec Semiconductor Germany

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DAN401
(Rev.:2002)

Small Signal Diode Arrays

Diotec Semiconductor Germany  

DAN 401 / DAP 401 (200 mW)

Operating junction temperature – Sperrschichttemperatur

Storage temperature – Lagerungstemperatur

Tj – 50…+150/C

TS – 50…+150/C

Characteristics

Forward voltage

Durchlaßspannung

Tj = 25/C IF = 10 mA

VF

Leakage current

Sperrstrom

Tj = 25/C VR = 20 V

IR

Reverse recovery time

Sperrverzug

IF = 10 mA through/über

trr

IR = 10 mA to/auf IR = 1 mA

Thermal resistance junction to ambient air

RthA

Wärmewiderstand Sperrschicht – umgebende Luft

Kennwerte

< 1.0 V

< 25 nA

< 4 ns

< 85 K/W 1)

1) Valid, if leads are kept at ambient temperature at a distance of 3 mm from case

Gültig, wenn die Anschlußdrähte in 3 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden

28.02.2002

359

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