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QIQ1245001 Datasheet PDF : 2 Pages
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QIQ1245001
Powerex, Inc., 200 Hillis St., Youngwood 15697 (724) 925-7272
Low side Chopper IGBT Module
1200V 450A IGBT / 1200V 750A Fast Diode
Maximum Ratings, Tj=25°C unless otherwise specified
Ratings
Symbol
QIQ1245001
Collector- Emitter Voltage (G-E Short)
Gate- Emitter Voltage (C-E Short)
Collector Current
Peak Collector Current (Tj<= 150°C)
Diode Forward Current
Power Dissipation
Junction Temperature
Storage Temperature
Mounting Torque, M6 Terminal Screws
Mounting Torque, M6 Mounting Screws
VCES
VGES
IC
ICM
IFM
Pd
Tj
Tstg
-
-
1200
±20
450
900*
750
TBD
-40 to 150
-40 to 125
40
40
Module Weight (Typical)
-
580
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
VRMS
2500
*Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
Units
Volts
Volts
Amperes
Amperes
Amperes
Watts
°C
°C
In-lb
In-lb
Grams
Volts
Static Electrical Characteristics, Tj=25°C unless otherwise specified
Characteristic
Symbol Test Conditions Min.
Collector Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Diode Forward Voltage
ICES
IGES
VCE=VCES VGE=0V
-
VGE=VGES VCE=0V
-
VGE(th) IC=45mA, VCE=10V 5.0
VCE(sat)
IC=450A, VGE=15V
-
IC=450A, VGE=15V,
-
Tj=125°C
QG
VCC=600V,
-
IC=450A, VGS=15V
VFM
IF=750A
-
Typ.
-
-
6.0
1.8
1.9
4950
-
Max.
1.0
60
7.0
2.4
-
-
3.2
Units
mA
µA
Volts
Volts
Volts
nC
Volts
Dynamic Electrical Characteristics, Tj=25°C unless otherwise specified
Characteristic
Symbol Test Conditions Min. Typ.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn on Delay time
Rise Time
Turn-off Delay Time
Fall Time
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Cies
Coes
Cres
td(on)
tr
td(off)
tf
trr
Qrr
VGE=0V
VCE=10V
f=1MHz
VCC=600V
IC=450A
VGE1=VGE2=15V
RG=1.0Ω
IF=750A
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
44.0
Max.
180
7.6
4.5
TBD
TBD
TBD
TBD
250
-
Units
nF
nF
nF
ns
ns
ns
ns
ns
µC
Thermal and Mechanical Characteristics, Tj=25°C unless otherwise specified
Characteristic
Symbol Test Conditions Min. Typ.
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
RθJC
RθJC
RθCF
Per IGBT
Per Diode
Per Module
-
0.075
-
0.052
-
0.01
Max.
TBD
TBD
-
Units
°C/W
°C/W
°C/W
Preliminary
Page 2
4/22/2002
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