UT28F64LVC55PCC 데이터 시트보기 (PDF) - Aeroflex UTMC

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UT28F64LVC55PCC

Radiation-Hardened 8K x 8 PROM

Aeroflex UTMC 

RECOMMENDED OPERATING CONDITIONS

SYMBOL

PARAMETER

VDD

Positive supply voltage

TC

Case temperature range

VIN

DC input voltage

LIMITS

3.0 to 3.6

-55 to +125

0 to VDD

UNITS

V

°C

V

DC ELECTRICAL CHARACTERISTICS (Pre/Post-Radiation)*

(VDD = 3.0V to 3.6V; -55°C < TC < +125°C)

SYMBOL

PARAMETER

CONDITION

MINIMUM

VIH

High-level input voltage

VI L

Low-level input voltage

VOL1 Low-level output voltage

IOL = 100µA, VDD = 3.0V

VOL2 Low-level output voltage

IOL = 1.0mA, VDD = 3.0V

VOH1 High-level output voltage

IOH = -100µA, VDD = 3.0V

VOH2 High-level output voltage

IOH = -1.0mA VDD = 3.0V

CIN 1 Input capacitance

ƒ = 1MHz, VDD = 3.3V

CIO 1, 4

Bidirectional I/O capacitance ƒ = 1MHz, VDD = 3.3V

VOUT = 0V

IIN

Input leakage current

VIN = 0V to VDD

IOZ

Three-state output leakage

VO = 0V to VDD

current

VDD = 3.6V

OE = 3.6V

IOS 2,3

Short-circuit output current

VDD = 3.6V, VO = VDD

VDD = 3.6V, VO = 0V

I D D(OP) 5

Supply current operating

@18.2MHz (55ns product)

CMOS input levels (IOUT = 0),

VIL = 0.2V, VIH = 3.0V

VDD, PE = 3.6V

IDD(SB) Supply current standby

post-rad

CMOS input levels,

VIL = VSS +0.25V

CE = VDD -025, VIH = VDD -0.25V

.7VDD

VDD - 0.15

VDD - 0.3

-3

-8

-90

Notes:

* Post-radiation performance guaranteed at 25°C per MIL-STD-883 Method 1019 at 1.0E6 rads(Si).

1. Measured only for initial qualification, and after process or design changes that could affect input/output capacitance.

2. Supplied as a design limit but not guaranteed or tested.

3. Not more than one output may be shorted at a time for maximum duration of one second.

4. Functional test.

5. Derates at 1.5mA/MHz.

MAXIMUM UNIT

V

.25VDD

V

VSS + 0.05

V

VSS + 0.1

V

V

V

15

pF

15

pF

3

µA

8

µA

90

mA

mA

50

mA

500

µA

3

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