5962F9764101VXC 데이터 시트보기 (PDF) - Intersil

부품명

상세내역

일치하는 목록

5962F9764101VXC

Radiation Hardened Ultra High Frequency NPN Transistor Array

Intersil 

Die Characteristics

DIE DIMENSIONS:

52 mils x 52.8 mils x 15 mils ±1 mil

1320µm x 1340µm x 381µm ±25.4µm

INTERFACE MATERIALS:

Glassivation:

Type: Nitride

Thickness: 4kÅ ±0.5kÅ

Top Metallization:

Type: Metal 1: AlCu (2%)/TiW

Thickness: Metal 1: 8kÅ ±0.5kÅ

Type: Metal 2: AlCu (2%)

Thickness: Metal 2: 16kÅ ±0.8kÅ

Substrate:

UHF-1X Bonded Wafer, DI

Backside Finish:

Silicon

Metallization Mask Layout

HS-6254RH

ASSEMBLY RELATED INFORMATION:

Substrate Potential:

Floating

ADDITIONAL INFORMATION:

Worst Case Current Density:

3.04 x 105A/cm2

Transistor Count:

5

HS-6254RH

2

1

16

15

3

14

4

13

5

12

6

11

7

8

9

10

NOTE: Pad numbers correspond to the 16 lead pinout.

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.

Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-

out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and

reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result

from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

For information regarding Intersil Corporation and its products, see web site http://www.intersil.com

3

Share Link: