5962R9675501VXC 데이터 시트보기 (PDF) - Intersil
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5962R9675501VXC Datasheet PDF : 7 Pages
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Die Characteristics
DIE DIMENSIONS:
179 mils x 107 mils x 19 mils
INTERFACE MATERIALS:
Glassivation:
Type: AlCu
Thickness: 8kÅ ±1kÅ
Top Metallization:
Type: Al/Copper
Thickness: 16kÅ ±2kÅ
Substrate:
Bipolar DI,
Metallization Mask Layout
HS-565ARH
Backside Finish:
Silicon
ASSEMBLY RELATED INFORMATION
Substrate Potential:
Tie Substrate to VREF GND
ADDITIONAL INFORMATION:
Worst Case Current Density:
2.0 x 105 A/cm2
Transistor Count:
200
VCC NC
33
HS-565ARH
NC
1
(MSB)
A BIT 1
BIT 2
VREF OUT
VREF
GND
VREF IN
-VS
BIPOLAR
12
IDAC
OUT
BIT 3
BIT 4
BIT 5
BIT 6
BIT 7
BIT 8
BIT 9
10V
SPAN
20V
SPAN
POWER
GND
BIT 12
(LSB)
BIT 11
BIT 10
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Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
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