5962F9562601QXC 데이터 시트보기 (PDF) - Intersil
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5962F9562601QXC Datasheet PDF : 5 Pages
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Die Characteristics
DIE DIMENSIONS:
271milsx307milsx19mils ±1mils
INTERFACE MATERIALS:
Glassivation:
Type: SiO2
Thickness: 8kÅ ± 1kÅ
Top Metallization:
M1:6kÅ ±±1kÅ Si/Al/Cu
2kÅ ±±500Å TiW
M2:10kÅ ± 2kÅSi/Al/Cu
Metallization Mask Layout
HS-6664RH
ASSEMBLY RELATED INFORMATION:
Substrate Potential:
VDD
ADDITIONAL INFORMATION:
Worst Case Current Density:
2x105 A/cm2
Transistor Count:
110, 874
HS-6664RH
4
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