MA5114 데이터 시트보기 (PDF) - Dynex Semiconductor

부품명

상세내역

일치하는 목록

MA5114

Radiation hard 1024x4 Bit Static RAM

Dynex Semiconductor 

MA5114

RADIATION TOLERANCE

Total Dose Radiation Testing

For product procured to guaranteed total dose radiation

levels, each wafer lot will be approved when all sample

devices from each lot pass the total dose radiation test.

The sample devices will be subjected to the total dose

radiation level (Cobalt-60 Source), defined by the ordering

code, and must continue to meet the electrical parameters

specified in the data sheet. Electrical tests, pre and post

irradiation, will be read and recorded.

GEC Plessey Semiconductors can provide radiation

testing compliant with MIL-STD-883 test method 1019,

Ionizing Radiation (Total Dose).

Total Dose (Function to specification)*

1x105 Rad(Si)

Transient Upset (Stored data loss)

5x1010 Rad(Si)/sec

Transient Upset (Survivability)

>1x1012 Rad(Si)/sec

Neutron Hardness (Function to specification) >1x1015 n/cm2

Single Event Upset**

3.4x10-9 Errors/bit day

Latch Up

Not possible

* Other total dose radiation levels available on request

** Worst case galactic cosmic ray upset - interplanetary/high altitude orbit

Figure 17: Radiation Hardness Parameters

SINGLE EVENT UPSET CHARACTERISTICS

UPSET BIT

CROSS-SECTION

(cm2/bit)

Ion LET (MeV.cm2/mg)

Figure 18: Typical Per-Bit Upset Cross-Section vs Ion LET

11/12

Share Link: