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CM150DU-24H

Dual IGBTMOD™ U-Series Module 150 Amperes/1200 Volts

Powerex 

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272

CM150DU-24H

Dual IGBTMOD™ U-Series Module

150 Amperes/1200 Volts

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Ratings

Symbol

CM150DU-24H

Junction Temperature

Storage Temperature

Collector-Emitter Voltage (G-E SHORT)

Gate-Emitter Voltage (C-E SHORT)

Collector Current (Tc = 25°C)

Peak Collector Current (Tj ≤ 150°C)

Emitter Current** (Tc = 25°C)

Peak Emitter Current**

Maximum Collector Dissipation (Tc = 25°C)

Mounting Torque, M6 Main Terminal

Tj

Tstg

VCES

VGES

IC

ICM

IE

IEM

Pc

–

-40 to 150

-40 to 125

1200

±20

150

300*

150

300*

890

40

Mounting Torque, M6 Mounting

–

40

Weight

–

400

Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)

Viso

2500

* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.

**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

Units

°C

°C

Volts

Volts

Amperes

Amperes

Amperes

Amperes

Watts

in-lb

in-lb

Grams

Volts

Static Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics

Symbol

Test Conditions

Min.

Collector-Cutoff Current

ICES

VCE = VCES, VGE = 0V

–

Gate Leakage Voltage

IGES

VGE = VGES, VCE = 0V

–

Gate-Emitter Threshold Voltage

VGE(th)

IC = 15mA, VCE = 10V

4.5

Collector-Emitter Saturation Voltage

VCE(sat)

IC = 150A, VGE = 15V, Tj = 25°C

–

IC = 150A, VGE = 15V, Tj = 125°C

–

Total Gate Charge

QG

VCC = 600V, IC = 150A, VGE = 15V

–

Emitter-Collector Voltage*

VEC

IE = 150A, VGE = 0V

–

* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.

Typ.

–

–

6

2.9

2.85

560

–

Max.

1

0.5

7.5

3.7

–

–

3.2

Units

mA

µA

Volts

Volts

Volts

nC

Volts

Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics

Symbol

Test Conditions

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Resistive

Turn-on Delay Time

Load

Rise Time

Switch

Turn-off Delay Time

Times

Fall Time

Diode Reverse Recovery Time

Diode Reverse Recovery Charge

Cies

Coes

Cres

td(on)

tr

td(off)

tf

trr

Qrr

VCE = 10V, VGE = 0V

VCC = 600V, IC = 150A,

VGE1 = VGE2 = 15V,

RG = 2.1⍀, Resistive

Load Switching Operation

IE = 150A, diE/dt = -300A/µs

IE = 150A, diE/dt = -300A/µs

Min.

Typ.

Max. Units

–

–

22

nf

–

–

7.4

nf

–

–

4.4

nf

–

–

200

ns

–

–

250

ns

–

–

300

ns

–

–

350

ns

–

–

300

ns

–

0.82 –

µC

Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics

Symbol

Test Conditions

Min.

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Case

Contact Thermal Resistance

Rth(j-c)Q

Per IGBT 1/2 Module

–

Rth(j-c)D

Per FWDi 1/2 Module

–

Rth(c-f)

Per Module, Thermal Grease Applied

–

54

Typ.

–

–

0.020

Max.

0.14

0.24

–

Units

°C/W

°C/W

°C/W

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