MP03HBN175-10 데이터 시트보기 (PDF) - Dynex Semiconductor

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MP03HBN175-10

Phase Control Dual SCR, SCR/Diode Modules

Dynex Semiconductor 

MP03 XXX 175 Series

CURVES

2000

Measured under pulse conditions

1500

1000

Tj = 150˚C

500

00.5

1.0

1.5

2.0

2.5

Instantaneous forward voltage VF - (V)

Fig. 1 Maximum (limit) on-state characteristics (thyristor or diode) - See Note 1

100

VFGM

10

Pulse

Width

µs

20

25

100

500

1ms

10ms

Pulse Frequency Hz Table gives pulse power PGM in watts

50 100 400

100 100 100

100 100 100

100 100 100

100 100 25

100 50

-

10

-

-

75W 100W

50W

10W

5W

Tj = 25˚C

Tj = 125˚C

1.0

Upper limit 99%

VGD

Lower limit 1%

0.1

0.001

0.01

0.1

1.0

10

Gate trigger current IGT - (A)

IFGM

Fig. 2 Gate trigger characteristics

4/10

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