IN74HCT86 데이터 시트보기 (PDF) - Integral Corp.

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IN74HCT86

Quad 2-Input Exclusive OR Gate High-Performance Silicon-Gate CMOS

Integral Corp. 

IN74HCT86

DC ELECTRICAL CHARACTERISTICS(Voltages Referenced to GND)

Symbol

Parameter

Test Conditions

VCC

Guaranteed Limit

V 25 °C ≤85 ≤125 Unit

to

°C °C

-55°C

VIH Minimum High-Level VOUT=0.1 V or VCC-0.1 V

4.5 2.0 2.0 2.0

V

Input Voltage

IOUT≤ 20 µA

5.5 2.0 2.0 2.0

VIL Maximum Low -

VOUT=0.1 V or VCC-0.1 V

4.5 0.8 0.8 0.8

V

Level Input Voltage IOUT ≤ 20 µA

5.5 0.8 0.8 0.8

VOH Minimum High-Level VIN= VIH or VIL

Output Voltage

IOUT ≤ 20 µA

4.5 4.4 4.4 4.4 V

5.5 5.4 5.4 5.4

VIN= VIH or VIL

IOUT ≤ 4.0 mA

4.5 3.98 3.84 3.7

VOL Maximum Low-Level VIN=VIH or VIL

Output Voltage

IOUT ≤ 20 µA

4.5 0.1 0.1 0.1 V

5.5 0.1 0.1 0.1

IIN

Maximum Input

Leakage Current

VIN=VIH or VIL

IOUT ≤ 4.0 mA

VIN=VCC or GND

4.5 0.26 0.33 0.4

5.5 ±0.1 ±1.0 ±1.0 µA

ICC

Maximum Quiescent VIN=VCC or GND

Supply Current

IOUT=0µA

(per Package)

5.5 2.0

20

40 µA

∆ICC Additional Quiescent VIN = 2.4 V, Any One Input

Supply Current

VIN=VCC or GND, Other

Inputs

≥-55°C

25°C to mA

125°C

IOUT=0µA

5.5

2.9

2.4

100

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