D1260 데이터 시트보기 (PDF) - Semelab - > TT Electronics plc
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D1260 Datasheet PDF : 2 Pages
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TetraFET
D1260UK
METAL GATE RF SILICON FET
MECHANICAL DATA
D
(2 pls)
C
E
B
1
2
3
A
G
5
4
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
60W – 12.5V – 175MHz
SINGLE ENDED
PIN 1
PIN 3
PIN 5
H
I
FM
K
DT
SOURCE (COMMON) PIN 2
SOURCE (COMMON) PIN 4
DRAIN
JN
GATE
SOURCE (COMMON)
DIM mm
A 6.35 DIA
B 3.17 DIA
C 18.41
D
5.46
E
5.21
F
7.62
G 21.59
H
3.94
I
12.70
J
0.13
K 24.76
M
2.59
N
4.06
Tol.
0.13
0.13
0.25
0.13
0.13
MAX
0.38
0.13
0.13
0.03
0.13
0.13
0.25
Inches
0.250 DIA
0.125 DIA
0.725
0.215
0.205
0.300
0.850
0.155
0.500
0.005
0.975
0.102
0.160
Tol.
0.005
0.005
0.010
0.005
0.005
MAX
0.015
0.005
0.005
0.001
0.005
0.005
0.010
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 10 dB MINIMUM
APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 175 MHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD
Power Dissipation
175W
BVDSS
Drain – Source Breakdown Voltage
40V
BVGSS
Gate – Source Breakdown Voltage
±20V
ID(sat)
Drain Current
40A
Tstg
Storage Temperature
–65 to 150°C
Tj
Maximum Operating Junction Temperature
200°C
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 9/95
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