D2213UK 데이터 시트보기 (PDF) - Semelab - > TT Electronics plc
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D2213UK Datasheet PDF : 2 Pages
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SEME
LAB
MECHANICAL DATA
B
(2 pls)
E
A
C2
3
1
5
4
G (4 pls)
F
K
D
PIN 1
PIN 3
PIN 5
HJ
I
DK
SOURCE (COMMON) PIN 2
DRAIN 2
GATE 1
PIN 4
MN
DRAIN 1
GATE 2
DIM mm
A
6.45
B 1.65R
C
45°
D 16.51
E
6.47
F 18.41
G
1.52
H
4.82
I
24.76
J
1.52
K 0.81R
M
0.13
N
2.16
Tol. Inches Tol.
0.13 0.254 0.005
0.13 0.065R 0.005
5°
45°
5°
0.76 0.650 0.03
0.13 0.255 0.005
0.13 0.725 0.005
0.13 0.060 0.005
0.25 0.190 0.010
0.13 0.975 0.005
0.13 0.060 0.005
0.13 0.032R 0.005
0.02 0.005 0.001
0.13 0.085 0.005
TetraFET
D2213UK
METAL GATE RF SILICON FET
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
20W – 12.5V – 1GHz
PUSH–PULL
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• VERY LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 10 dB MINIMUM
APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS
from 1MHz to 2 GHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD
Power Dissipation
83W
BVDSS
Drain – Source Breakdown Voltage *
40V
BVGSS
Gate – Source Breakdown Voltage *
±20V
ID(sat)
Drain Current *
8A
Tstg
Storage Temperature
–65 to 150°C
Tj
Maximum Operating Junction Temperature
200°C
* Per Side
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 2/96
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